1/9 july 2000 STGP3NB60H n-channel 3a - 600v / to-220 powermesh? igbt n high input impedance n low on-voltage drop (v cesat ) n off losses include tail current n low gate charge n high current capability n very high frequency operation n co-packaged with turboswitcht n typical short circuit withstand time 5micros s-family, 4 micro h family n antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has de- signed an advanced family of igbts, the power- mesh? igbts, with outstanding perfomances. the suffix "h" identifies a family optimized for high frequency applications (up to 50khz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. applications n high frequency motor controls n smps and pfc in both hard switch and resonant topologies absolute maximum ratings type v ces v ce(sat) i c STGP3NB60H 600 v < 2.8 v3 a symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuos) at t c = 25c 6a i c collector current (continuos) at t c = 100c 3a i cm ( n ) collector current (pulsed) 24 a p tot total dissipation at t c = 25c 70 w derating factor 0.56 w/c t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c to-220 1 2 3 internal schematic diagram
STGP3NB60H 2/9 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic switching on rthj-case thermal resistance junction-case max 1.78 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-sink thermal resistance case-sink typ 0.5 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge = 0) v ce = max rating, t c = 25 c 10 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge , i c = 250a 35v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 3 a 2.4 2.8 v v ge = 15v, i c = 3 a, tj =125c 1.9 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce = 25 v , i c =3 a 1.3 2.4 s c ies input capacitance v ce = 25v, f = 1 mhz, v ge = 0 235 pf c oes output capacitance 33 pf c res reverse transfer capacitance 6.6 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480v, i c = 3 a, v ge = 15v 21 6 7.6 27 nc nc nc i cl latching current v clamp = 480 v , tj = 125c r g = 10 w 12 a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc = 480 v, i c = 3 a r g =10 w , v ge = 15 v 16 30 ns ns (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c = 3 a r g =10 w v ge = 15 v,tj = 125c 400 37 a/s j
3/9 STGP3NB60H electrical characteristics (continued) switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c =3 a, r ge = 10 w , v ge = 15 v 90 ns t r (v off ) off voltage rise time 36 ns t d ( off ) delay time 53 ns t f fall time 70 ns e off (**) turn-off switching loss 33 m j e ts total switching loss 65 m j t c cross-over time v cc = 480 v, i c = 3 a, r ge = 10 w , v ge = 15 v tj = 125 c 180 ns t r (v off ) off voltage rise time 82 ns t d ( off ) delay time 58 ns t f fall time 110 ns e off (**) turn-off switching loss 88 m j e ts total switching loss 125 m j thermal impedance
STGP3NB60H 4/9 collector-emitter on voltage vs collettor current collector-emitter on voltage vs temperature transconductance transfer characteristics output characteristics gate threshold vs temperature
5/9 STGP3NB60H total switching losses vs collector current gate charge vs gate-emitter voltage total switching losses vs gate resistance capacitance variations normalized breakdown voltage vs temperature total switching losses vs temperature
STGP3NB60H 6/9 switching off safe operating area
7/9 STGP3NB60H fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
STGP3NB60H 8/9 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/9 STGP3NB60H information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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